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IRFB4310PBF

IRFB4310PBF by Infineon Technologies

N-Channel 100 V 130A (Tc) 300W (Tc) Through Hole TO-220AB

Active HEXFET® Series Datasheet (PDF)

Component Details

Part Number
IRFB4310PBF
Manufacturer
Infineon Technologies
DigiKey P/N
IRFB4310PBF-ND
Lifecycle
Active

Stock & Pricing

Distribution Stock
29,644 units
Lead Time
17 weeks
Reference Price (1 pc)
$3.7900
Price (100 pc)
$1.7283

Specifications

ParameterValue
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 250 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7670 pF @ 50 V
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

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The IRFB4310PBF is classified under Transistors in the Discrete Semiconductor Products category, part of the HEXFET® series.

IRFB4310PBF Specifications

Parameter Value
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current – Continuous Drain (Id) @ 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 250 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7670 pF @ 50 V
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

Availability & Supply Status

  • Status: In Stock
  • Lifecycle: Active
  • Distribution Stock: 29,644 units
  • Standard Lead Time: 17 weeks

Datasheet

Download the official IRFB4310PBF datasheet (PDF) for full electrical characteristics, pinout diagrams, and application notes.

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