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IRFB3306PBF

IRFB3306PBF by Infineon Technologies

N-Channel 60 V 120A (Tc) 230W (Tc) Through Hole TO-220AB

Active HEXFET® Series Datasheet (PDF)

Component Details

Part Number
IRFB3306PBF
Manufacturer
Infineon Technologies
DigiKey P/N
448-IRFB3306PBF-ND
Lifecycle
Active

Stock & Pricing

Distribution Stock
1,965 units
Lead Time
17 weeks
Reference Price (1 pc)
$2.7300
Price (100 pc)
$1.2052

Specifications

ParameterValue
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4520 pF @ 50 V
Power Dissipation (Max) 230W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

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The IRFB3306PBF is classified under Transistors in the Discrete Semiconductor Products category, part of the HEXFET® series.

IRFB3306PBF Specifications

Parameter Value
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current – Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4520 pF @ 50 V
Power Dissipation (Max) 230W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

Availability & Supply Status

  • Status: In Stock
  • Lifecycle: Active
  • Distribution Stock: 1,965 units
  • Standard Lead Time: 17 weeks

Datasheet

Download the official IRFB3306PBF datasheet (PDF) for full electrical characteristics, pinout diagrams, and application notes.

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