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SCT3022ALGC11

SCT3022ALGC11 by Rohm Semiconductor

N-Channel 650 V 93A (Tc) 339W (Tc) Through Hole TO-247N

Component Details

Part Number
SCT3022ALGC11
Manufacturer
Rohm Semiconductor
DigiKey P/N
SCT3022ALGC11-ND
Lifecycle
Active

Stock & Pricing

Distribution Stock
1,100 units
Lead Time
27 weeks
Reference Price (1 pc)
$53.0000
Price (100 pc)
$36.0580

Specifications

ParameterValue
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 93A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 28.6mOhm @ 36A, 18V
Vgs(th) (Max) @ Id 5.6V @ 18.2mA
Gate Charge (Qg) (Max) @ Vgs 133 nC @ 18 V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 2208 pF @ 500 V
Power Dissipation (Max) 339W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3

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The SCT3022ALGC11 is classified under Transistors in the Discrete Semiconductor Products category.

SCT3022ALGC11 Specifications

Parameter Value
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current – Continuous Drain (Id) @ 25°C 93A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 28.6mOhm @ 36A, 18V
Vgs(th) (Max) @ Id 5.6V @ 18.2mA
Gate Charge (Qg) (Max) @ Vgs 133 nC @ 18 V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 2208 pF @ 500 V
Power Dissipation (Max) 339W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3

Availability & Supply Status

  • Status: Long Lead (27wk) – We May Beat This
  • Lifecycle: Active
  • Distribution Stock: 1,100 units
  • Standard Lead Time: 27 weeks

Datasheet

Download the official SCT3022ALGC11 datasheet (PDF) for full electrical characteristics, pinout diagrams, and application notes.

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