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IRFB5615PBF

IRFB5615PBF by Infineon Technologies

N-Channel 150 V 35A (Tc) 144W (Tc) Through Hole TO-220AB

Component Details

Part Number
IRFB5615PBF
Manufacturer
Infineon Technologies
DigiKey P/N
448-IRFB5615PBF-ND
Lifecycle
Active

Stock & Pricing

Distribution Stock
1,278 units
Lead Time
31 weeks
Reference Price (1 pc)
$2.0800
Price (100 pc)
$0.8947

Specifications

ParameterValue
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 39mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1750 pF @ 50 V
Power Dissipation (Max) 144W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

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The IRFB5615PBF is classified under Transistors in the Discrete Semiconductor Products category.

IRFB5615PBF Specifications

Parameter Value
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current – Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 39mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1750 pF @ 50 V
Power Dissipation (Max) 144W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

Availability & Supply Status

  • Status: Long Lead (31wk) – We May Beat This
  • Lifecycle: Active
  • Distribution Stock: 1,278 units
  • Standard Lead Time: 31 weeks

Datasheet

Download the official IRFB5615PBF datasheet (PDF) for full electrical characteristics, pinout diagrams, and application notes.

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