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MSC040SMA120B

MSC040SMA120B by Microchip Technology

N-Channel 1200 V 66A (Tc) 323W (Tc) Through Hole TO-247-3

Active MSiC™ MA Series Datasheet (PDF)

Component Details

Part Number
MSC040SMA120B
Manufacturer
Microchip Technology
DigiKey P/N
MSC040SMA120B-ND
Lifecycle
Active

Stock & Pricing

Distribution Stock
21 units
Lead Time
4 weeks
Reference Price (1 pc)
$24.2300
Price (100 pc)
$18.2601

Specifications

ParameterValue
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 2.7V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 137 nC @ 20 V
Vgs (Max) +23V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 1000 V
Power Dissipation (Max) 323W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3

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The MSC040SMA120B is classified under Transistors in the Discrete Semiconductor Products category, part of the MSiC™ MA series.

MSC040SMA120B Specifications

Parameter Value
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current – Continuous Drain (Id) @ 25°C 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 2.7V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 137 nC @ 20 V
Vgs (Max) +23V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 1000 V
Power Dissipation (Max) 323W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3

Availability & Supply Status

  • Status: Low Stock – Order Soon
  • Lifecycle: Active
  • Distribution Stock: 21 units
  • Standard Lead Time: 4 weeks

Datasheet

Download the official MSC040SMA120B datasheet (PDF) for full electrical characteristics, pinout diagrams, and application notes.

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Data last verified: 2 weeks ago. Availability may have changed — check current stock.

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